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John D. Macdougall

  • Born: unknown

  Interview Details

Interview no.: 0307
Interview Date: March 7, 2005
Location: Telephone Call, Westboro, Massachusetts
Interviewer: Christophe Lécuyer
No. of pages: 26
Sponsor: Chemical History of Electronics
Chemical History of Electronics

  Abstract of Interview

John D. Macdougall begins the interview with a summary of his graduate and doctoral work. In 1966 Macdougall began working at Sprague Electric Company in the research and development department with ion implementation. He built a permanent magnet velocity filter and scanning system upon arriving, which aided in implanting uniformly over the wafer. The second implanter machine he built at Sprague used parts supplied by Accelerators, Inc. Macdougall contributed to work on PNP transistors, working on implants for beta control. He also implanted TTL circuits and linear circuits and aided in the developmental progress of MOS (metal oxide semiconductors) to MOSFETS (metal oxide semiconductor field effect transistors). He also worked on device characterization and MOS for two military R&D contracts. He worked on a threshold adjust technique, which Robert Palmer created a use for. Macdougall eventually moved to the Worcester facility, before Sprague was sold to General Cable. Macdougall served as a consultant for Sprague until the semiconductor research group dissolved in 1975. He then moved on to engineering management at the Worcester facility of General Cable.

  Table of Contents

Title and Description Page

College Education 1

Doctoral work in physics. Graduate student at McMaster University.

Career at Sprague Electric Company 2

North Adams facility. Research and development of ion implementation. Technology X. Built magnet velocity filter and a scanning system. International ion beam conference. Bought parts for second implanter from Accelerators, Inc.

PNP Transistors 10

Implants for beta control. Implanted TTL circuits. Implanted linear circuits. Published in the Proceedings of the Institute of Electrical and Electronics Engineers. Technology X. Patent.

Metal Oxide Semiconductors 13

Ion implementation. Physicist in a group of chemists. Military R&D contracts. Metal oxide semiconductor field effect transistors. Complementary metal oxide semiconductors.

Threshold work 16

Two low-threshold approaches. Tri-state logic. Threshold adjust technique.

Relationships 18

Robert Palmer and collaboration. Sprague and MOSTEK. Published in Electronics.

Conclusion 20

Depletion load work. Sprague Electric sold to General Cable. Move from North Adams to Worcester. MOSTEK-Sprague consultant. Semiconductor industry's adoption of ion implantation.

Notes 23

Index 24

  About the Interviewer

Christophe Lécuyer

Christophe Lécuyer is a graduate of the École Normale Supérieure in Paris, and he received a Ph.D. in history from Stanford University. He was a fellow of the Dibner Institute for the History of Science and Technology and has taught at the Massachusetts Institute of Technology, Stanford University, and the University of Virginia. Before becoming a senior research fellow at CHF, Lécuyer was the program manager of the electronic materials department. He has published widely on the history of electronics, engineering education, and medical and scientific instruments, and is the author of Making Silicon Valley: Innovation and the Growth of High Tech, 1930–1970 (2005).

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